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Preliminary Data Sheet
Product Description
Sirenza Microdevices' SGB-4533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4533 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-4533
DC - 3 GHz Active Bias Gain Block
Functional Block Diagram
Vbias VCC NC NC Active Bias
NC NC
NC NC RFOUT NC
* * * * * *
Product Features
High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 9.8 dBm @ 1950MHz IP3 = 23.5 dBm @ 1950MHz Low Thermal Resistance = 50 C/W
RFIN NC
* * *
Applications
3V Battery operated applications LO buffer amp RF pre-driver and RF receive path
Unit MHz dB Min. DC 24.7 17.0 18.5 16.8 10.5 dBm 8.3 9.8 9.5 24.5 dB dB dB mA dB C/W 21.0 9.0 12.0 50 23.5 23.0 12.9 15.9 56 3.6 50 62 4.6 20.0 Typ. Max. 3000
Key Specifications
Symbol fO S21 Parameters: Test Conditions Z0 = 50, VCC = 3.0V, Ic = 56mA, T = 30C) Frequency of Operation Small Signal Gain - 850MHz Small Signal Gain - 1950MHz Small Signal Gain - 2400MHz Output Power at 1dB Compression - 850MHz P1dB Output Power at 1dB Compression - 1950MHz Output Power at 1dB Compression - 2400MHz Output IP3 - 850MHz OIP3 IRL ORL Ic NF Rth, j-l Output IP3 - 1950MHz Output IP3 - 2400MHz Input Return Loss @ 1950MHz Output Return Loss @ 1950MHz Current Noise Figure @1950MHz Thermal Resistance (junction - lead)
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO. 80021
GND
NC
NC
NC
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-103091 Rev C
Preliminary Data Sheet SGB-4533 DC-3GHz Active Bias Gain Block
Detailed Performance Table: Vcc=3V, Ic=56mA, T=25C, Z=50ohms
Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output 3rd Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure Units dB dBm dBm dB dB dB dB 19.0 16.5 30.9 4.6 100MHz 27.3 500MHz 26.3 24.5 11.0 16.9 21.4 29.9 3.0 850MHz 24.7 24.5 10.5 15.6 24.1 29.5 3.0 1950MHz 18.5 23.5 9.8 12.9 15.9 27.6 3.6 2400MHz 16.8 23.0 9.5 11.0 16.1 26.4 4.1 7.7 17.2 24.2 4.9 3500MHz 12.9
Pin Out Description
Pin # 1,2,4, 6, 7,8,11, 12,14 3 5 10 13 16 Backside Function NC RFIN GND RFOUT VBIAS VCC GND Description These are no connect pins. Leave them unconnected on the PC board. RF input pin. A DC voltage should not be connected externally to this pin An extra ground pin that is connected to the backside exposed paddle. Connection is optional. RF Output pin. Bias is applied to the Darlington stage thru this pin. This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. This is Vcc for the active bias circuit. The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the main thermal path.
Simplified Device Schematic
16 15 14 13
Absolute Maximum Ratings
Parameters Value 120 5 0.4 -40 to +85 20 -40 to +150 +150 Unit mA V W C dBm C C
1 2
Active Bias
Current (Ic total)
12 11 10
Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power Storage Temperature Range Operating Junction Temperature (TJ)
3 4
9
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH' j-l
5
6
7
8
Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103091 Rev C
303 South Technology Court, Broomfield, CO. 80021
Preliminary Data Sheet SGB-4533 DC-3GHz Active Bias Gain Block
Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 56mA) Bias Tee substituted for DC feed inductor (L1)
Gain vs Frequency
30.0
28.0 26.0 24.0 22.0 20.0 +25c 18.0 16.0 +85c -40c
OIP3 vs. Frequency
26.0
Gain (dB)
22.0
18.0
+25c +85c -40c
14.0
10.0 0.4 0.9 1.4 1.9 2.4
OIP3 (dBm)
0.4
0.9
1.4
1.9
2.4
Frequency (GHz)
Frequency (GHz)
P1dB vs. Frequency
13.0 12.0 11.0 10.0 9.0 8.0 7.0 0.4 0.9 1.4 1.9 2.4 +25c +85c -40c
1.0 0.0 0.0 0.5 7.0 6.0
Noise Figure vs. Frequency
Noise Figure (dB)
5.0 4.0 3.0 2.0 +25c +85c -40c
P1dB (dBm)
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
Ic vs. Tem perature
0.070 0.065
Current vs. Voltage
0.090 0.080 0.070 0.060
Ic (mA)
0.055 0.050 0.045 0.040 + 85c + 25c -40c
Ic (A)
0.060
0.050 0.040 0.030 0.020 0.010 0.000 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
Tem perature
303 South Technology Court, Broomfield, CO. 80021
Vc (Volts)
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-103091 Rev C
Preliminary Data Sheet SGB-4533 DC-3GHz Active Bias Gain Block
Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 56mA) Bias Tee substituted for DC feed inductor (L1)
l S21 l vs. Frequency
l S11 l vs. Frequency
30.0
0.0 -5.0
25.0 +25c 20.0 +85c -40c 15.0
-10.0
S11 (dB)
S21 (dB)
-15.0 -20.0 +25c -25.0 -30.0 -35.0 +85c -40c
10.0
5.0
0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
l S12 l vs. Frequency
-19.0 -21.0 -23.0
-10.0 -12.0 -14.0 -16.0
l S22 l vs. Frequency
S12 (dB)
-25.0 -27.0 -29.0 -31.0 -33.0 +25c +85c -40c
S22 (dB)
-18.0 -20.0 -22.0 -24.0 -26.0 -28.0 -30.0 +25c +85c -40c
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
303 South Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-103091 Rev C
Preliminary Data Sheet SGB-4533 DC-3GHz Active Bias Gain Block
Typical Evaluation Board Schematic for 3.0V
Vcc
C4
C3
VCC NC NC
NC
NC
Vbias NC NC RFOUT NC
L1
RFIN C1
RFOUT C2
RFIN NC GND Option NC NC NC
Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper Component Values By Band
C4
Designator C3 C4* C1, C2 L1
500MHz 1000pF 1uF 220pF 68 nH
850MHz 1000pF 1uF 68pF 33nH
1950MHz 2400MHz 1000pF 1uF 43pF 22nH 1000pF 1uF 22pF 18nH
C3
1
L1 C2
* C4 is optional depending on application and filtering. Not required for SGB device operation.
C1
Note: The amplifier can be run from a 5V supply by simply inserting a 33 ohm resistor in series with Vcc.
303 South Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com EDS-103091 Rev C
Preliminary Data Sheet SGB-4533 DC-3GHz Active Bias Gain Block
Part Marking
The part will be symbolized with an "SGB-4533" marking designator on the top surface of the package.
Part Number Ordering Information
Part Number SGB-4533 Reel Size 13" Devices/Reel 3000
Package Outline Drawing (Dimensions in mm)
Recommended Land Pattern:
DIMENSIONS IN INCHES 0.062 0.020 0.010 0.015 0.011 0.008
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
0.062 0.030
O0.015 PLATED THRU (4PL) 0.005 CHAMFER (8PL)
Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-103091 Rev C
303 South Technology Court, Broomfield, CO. 80021

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